| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N441 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 2 |
2N442 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 3 |
2N443 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 4 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 5 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 6 |
4060AL |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 7 |
4410A |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 8 |
6060R |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 9 |
7443PC |
Excess--to-decimal decoder |
TUNGSRAM |
| 10 |
7444PC |
Excess-3-gray-to-decimal decoder |
TUNGSRAM |
| 11 |
8540 |
Numeric Displays |
Excel Technology International Corp. |
| 12 |
8540XXX |
Numeric Displays |
Excel Technology International Corp. |
| 13 |
9410A |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 14 |
9953A |
Dual P-Channel Enhancement Mode MOSFET |
Chino-Excel Technology |
| 15 |
ADS5410 |
12-Bit, 80 MSPS ADC, Single Ch., Lowest Power, High BW, Excellent Performance |
Texas Instruments |
| 16 |
ADS5410IPFB |
12-Bit, 80 MSPS ADC, Single Ch., Lowest Power, High BW, Excellent Performance |
Texas Instruments |
| 17 |
APPLICATION-NOTE |
Transistors with excelent in Electrostatic-Discharge-Resistant (ESDR) |
NEC |
| 18 |
BBY55-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 19 |
BBY55-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 20 |
BBY56-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 21 |
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 22 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 23 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 24 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 25 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 26 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 27 |
BLW95 |
HF Power NPN Transistor, presents excellent performance as a linear amplifier in SSB applications |
Philips |
| 28 |
BSS138 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 29 |
BSS84 |
P-Channel Enhancement Mode MOSFET |
Chino-Excel Technology |
| 30 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
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