No. |
Part Name |
Description |
Manufacturer |
1 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
2 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
3 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
4 |
AEY30A |
Germanium tunnel diode |
Siemens |
5 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
6 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
7 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
8 |
AEY30B |
Germanium tunnel diode |
Siemens |
9 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
10 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
11 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
12 |
AEY30C |
Germanium tunnel diode |
Siemens |
13 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
14 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
15 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
16 |
AEY30D |
Germanium tunnel diode |
Siemens |
17 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
18 |
AEY31 |
Detector diode |
mble |
19 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
20 |
AEY31A |
Detector diode |
mble |
21 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
22 |
AEY33 |
Microwave detector diode |
Philips |
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