| No. |
Part Name |
Description |
Manufacturer |
| 1 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 2 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 3 |
ACU2109 |
The ACU2109 is a Monolithic GaAs IC incorporating all upconverter functions of a double conversion CATV, Cable Modem and TV tuner: ... |
Anadigics Inc |
| 4 |
ADM232A |
Part of a family of high speed RS-232 line drivers/receivers offering transmission rates up to 200 kB/s |
Analog Devices |
| 5 |
AGB3300 |
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ... |
Anadigics Inc |
| 6 |
AGB3301 |
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ... |
Anadigics Inc |
| 7 |
AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 8 |
AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 9 |
AGB3306 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 10 |
AGB3307 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 11 |
AN1387 |
APPLICATION OF A NEW MONOLITHIC SMART IGBT IN DC MOTOR CONTROL FOR HOME APPLIANCES |
SGS Thomson Microelectronics |
| 12 |
AN565 |
MEDIAN-TIME-TO-FAILURE (MTF) OF A L-BAND POWER TRANSISTOR UNDER RF CONDITIONS |
SGS Thomson Microelectronics |
| 13 |
AND8031 |
Isolated Precision Regulation of a Single 1.8 Volt Output from a Universal Line Input |
ON Semiconductor |
| 14 |
AND8031D |
Isolated Precision Regulation of a Single 1.8 Volt Output from a Universal Line Input |
ON Semiconductor |
| 15 |
AT91SAM7S128 |
Atmel’s AT91SAM7S128 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. ... |
Atmel |
| 16 |
AT91SAM7S256 |
Atmel’s AT91SAM7S256 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. ... |
Atmel |
| 17 |
AT91SAM7S32 |
Atmel’s AT91SAM7S32 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. It ... |
Atmel |
| 18 |
AT91SAM7S64 |
Atmel’s AT91SAM7S64 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. It ... |
Atmel |
| 19 |
BFX44 |
Application note - Example of Deflection stage of a wideband oscilloscope circuit |
COMPELEC |
| 20 |
BXY16 |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 21 |
BXY16B |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 22 |
BXY16C1 |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 23 |
BXY16C2 |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 24 |
BXY19 |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 25 |
BXY19GB |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 26 |
BXY19HA |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
| 27 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 28 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 29 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 30 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
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