| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 2 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 3 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 4 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 5 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 6 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 7 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 8 |
CSA1532 |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 70 - 220 hFE. Complementary CSC3930 |
Continental Device India Limited |
| 9 |
CSA1532B |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 70 - 140 hFE. Complementary CSC3930B |
Continental Device India Limited |
| 10 |
CSA1532C |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 110 - 220 hFE. Complementary CSC3930C |
Continental Device India Limited |
| 11 |
MPSA92M |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
DC Components |
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