| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1561 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 2 |
2N1562 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 3 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 4 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 5 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 6 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 7 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 8 |
2SA1257 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 9 |
2SB1173 |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
| 10 |
2SB1173A |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
| 11 |
2SB1266 |
PNP Triple Diffused Planar Type Silicon Transistors AF Power Amplifier Applications |
SANYO |
| 12 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 13 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 14 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
| 15 |
2SB697 |
For AF Power Amplifier Use |
Unknow |
| 16 |
2SB697K |
For AF Power Amplifier Use |
Unknow |
| 17 |
2SB750 |
Si PNP epitaxial planar darlington. AF power amplifier. |
Panasonic |
| 18 |
2SB750A |
Si PNP epitaxial planar darlington. AF power amplifier. |
Panasonic |
| 19 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
| 20 |
2SC101 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 21 |
2SC102 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 22 |
2SC106 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 23 |
2SC107 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 24 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 25 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 26 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 27 |
2SC161 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 28 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 29 |
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications |
SANYO |
| 30 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
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