| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 2 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 3 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 4 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 5 |
HAF1009S |
Transistors>Switching/MOSFETs |
Renesas |
| 6 |
MF1009S-1 |
FOR AMPS MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| | | |
