| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5082-F101-00000 |
Low Current Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 2 |
ADUCRF101 |
Precision Analog Microcontroller ARM Cortex M3 with RF Transceiver |
Analog Devices |
| 3 |
AF101 |
Germanium PNP junction transistor, before and mixer stage 2MHz, IF amplifier 470kHz |
TELEFUNKEN |
| 4 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 5 |
AUIRF1010EZ |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 6 |
AUIRF1010EZL |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 7 |
AUIRF1010EZS |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 8 |
AUIRF1010Z |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 9 |
AUIRF1010ZL |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 10 |
AUIRF1010ZS |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 11 |
AUIRF1018ES |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 12 |
AUIRF1018ESTRR |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 13 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 14 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 15 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 16 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 17 |
CJF101 |
80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF106 |
Continental Device India Limited |
| 18 |
CJF106 |
80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF101 |
Continental Device India Limited |
| 19 |
CPF101IG |
Product type: POTS/ISDN splitter. System application: POTS/ISDN filter for ADSL. |
YCL |
| 20 |
CPF101NW |
Product type: ISDN/POTS splitter. System application: asymmetric digital sudscriber line. |
YCL |
| 21 |
DF101 |
50 V, 1 A, bridge rectifier |
Leshan Radio Company |
| 22 |
DF101-S |
50 V, 1 A, bridge rectifier |
Leshan Radio Company |
| 23 |
dsPIC30F1010 |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 24 |
DSPIC30F1010-20E/MM |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 25 |
DSPIC30F1010-20E/SO |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 26 |
DSPIC30F1010-20E/SP |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 27 |
DSPIC30F1010-30I/MM |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 28 |
DSPIC30F1010-30I/SO |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 29 |
DSPIC30F1010-30I/SP |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 30 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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