Datasheets for F1012

Datasheets found :: 13 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	BF1012	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network	Siemens
2	BF1012S	Silicon N-Channel MOSFET Tetrode	Infineon
3	BF1012S	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)	Siemens
4	BF1012W	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)	Siemens
5	F1012	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR	Polyfet RF Devices
6	MF1012S-1	FOR GPS SYSTEM	Mitsubishi Electric Corporation
7	MRF10120	120 W, microwave power transistor NPN silicon	MA-Com
8	MRF10120	MICROWAVE POWER TRANSISTOR	Motorola
9	MRF10120	MICROWAVE POWER TRANSISTOR NPN SILICON	Tyco Electronics
10	PTF10120	120 Watts, 1.8�2.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
11	PTF10122	50 Watts WCDMA, 2.1�2.2 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
12	PTF10125	135 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
13	TFF1012HN	Integrated mixer oscillator PLL for satellite LNB	NXP Semiconductors

Datasheets found :: 13 Page: | 1 |