| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 2 |
F1016 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3 |
FPF1016 |
IntelliMAX� 1V Rated Advanced Load Management Products |
Fairchild Semiconductor |
| 4 |
K6F1016U4C-EF55 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 5 |
K6F1016U4C-EF70 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 6 |
PTF10160 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 7 |
PTF10161 |
165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 8 |
PTF10162 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 9 |
SN74F1016 |
16-Bit Schottky Barrier Diode R-C Bus-Termination Array |
Texas Instruments |
| 10 |
SN74F1016DW |
16-Bit Schottky Barrier Diode R-C Bus-Termination Array |
Texas Instruments |
| 11 |
SN74F1016DWG4 |
16-Bit Schottky Barrier Diode R-C Bus-Termination Array 20-SOIC 0 to 70 |
Texas Instruments |
| 12 |
SN74F1016DWR |
16-Bit Schottky Barrier Diode R-C Bus-Termination Array |
Texas Instruments |
| | | |
