No. |
Part Name |
Description |
Manufacturer |
1 |
AF106 |
Germanium PNP Mesa RF Transistor |
AEG-TELEFUNKEN |
2 |
AF106 |
Germanium PNP MESA transistor |
Felvezeto Katalogus 1966 |
3 |
AF106 |
Germanium MESA PNP VHF transistor |
SGS-ATES |
4 |
AF106 |
Transistor PNP |
Siemens |
5 |
AF106 |
PNP Germanium RF Transistor for pre-, mixer and oscillator stages up to 260 MHZ |
Siemens |
6 |
AF106 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
7 |
AF106 |
Germanium PNP-Mesa junction UHF transistor |
TELEFUNKEN |
8 |
AF106 |
Germanium PNP MESA Transistor |
TUNGSRAM |
9 |
AF106 |
Germanium PNP RF transistor |
VALVO |
10 |
CJF101 |
80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF106 |
Continental Device India Limited |
11 |
CJF106 |
80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF101 |
Continental Device India Limited |
12 |
CPF106C |
Product type: POTS splitter. System application: asymmetric digital subscriber line. |
YCL |
13 |
DF106 |
800 V, 1 A, bridge rectifier |
Leshan Radio Company |
14 |
DF106-S |
800 V, 1 A, bridge rectifier |
Leshan Radio Company |
15 |
F1060 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
16 |
F1063 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
17 |
F1065 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
18 |
F1066 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
19 |
F1069 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
20 |
F106U |
Shape and dimensions SITELESC package |
SESCOSEM |
21 |
MBRF1060 |
SCHOTTKY ISOLATED PLASTIC RECTIFIER |
General Semiconductor |
22 |
MBRF1060 |
10 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
23 |
MBRF1060 |
Rectifier: Schottky |
Taiwan Semiconductor |
24 |
MBRF1060 |
Schottky Barrier Rectifier, Forward Current 10A |
Vishay |
25 |
MBRF1060-G |
Schottky Barrier Rectifiers Diodes, VRRM=60V, VR=60V, IO=10A |
Comchip Technology |
26 |
MBRF1060CT |
10A SCHOTTKY BARRIER RECTIFIER |
Diodes |
27 |
MBRF1060CT |
10 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
28 |
MBRF1060CT |
Rectifier: Schottky |
Taiwan Semiconductor |
29 |
MBRF1060CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=60V, VR=60V, IO=10A |
Comchip Technology |
30 |
MBRF1060CT-JT |
10A SCHOTTKY BARRIER RECTIFIER |
Diodes |
| | | |