| No. |
Part Name |
Description |
Manufacturer |
| 1 |
54F112 |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 2 |
5962F1120101QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 3 |
5962F1120101VXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 4 |
5962F1120102QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 5 |
5962F1120102VXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 6 |
5962F1120201QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 7 |
5962F1120202QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 8 |
5962F1123501QXA |
4-Mbit (512 K � 8) Static RAM with RadStop™ Technology |
Cypress |
| 9 |
74F112 |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 10 |
74F112 |
Dual JK Negative Edge-Triggered Flip-Flop |
National Semiconductor |
| 11 |
74F112 |
Dual J-K negative edge-triggered flip-flop |
Philips |
| 12 |
74F112CW |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 13 |
74F112PC |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 14 |
74F112SC |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 15 |
74F112SCX |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 16 |
74F112SJ |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 17 |
74F112SJX |
Dual JK Negative Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
| 18 |
CPF112G |
Product type: POTS splitter. System application: asymmetric digital subscriber line. |
YCL |
| 19 |
ERJA1AF112U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 20 |
ERJB1AF112U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 21 |
ERJB2AF112V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 22 |
ERZE10F112 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 23 |
ERZE11F112 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 24 |
F112 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 25 |
F112 |
Silicon rectifier diode |
IPRS Baneasa |
| 26 |
F112 |
Silicon Rectifier Diode 2A 1000V |
IPRS Baneasa |
| 27 |
F112 |
2A 1000V Rectifier Diode |
IPRS Baneasa |
| 28 |
F112 |
Shape and dimensions SITELESC package |
SESCOSEM |
| 29 |
F1120 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 30 |
I74F112D |
Dual J-K negative edge-triggered flip-flop |
Philips |
| | | |
