| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
| 2 |
CPF122F |
Product type: POTS splitter. System application: asymmetric digital subscriber line. |
YCL |
| 3 |
ERJA1AF122U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 4 |
ERJB1AF122U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 5 |
ERJB2AF122V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 6 |
F122 |
Shape and dimensions SITELESC package |
SESCOSEM |
| 7 |
F1220 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 8 |
F1221 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 9 |
F1222 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 10 |
GF122 |
Germanium PNP Transistor |
RFT |
| 11 |
GF122 |
Germanium PNP high-frequency transistor |
RFT |
| 12 |
GF122b |
Germanium PNP Transistor |
RFT |
| 13 |
GF122b |
Germanium PNP high-frequency transistor |
RFT |
| 14 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 15 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 16 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 17 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 18 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 19 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
| 20 |
IRFF122 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 5A |
Siliconix |
| 21 |
MF122 |
COMPLEMENTARY SILICON POWER DARLINGTONS |
Motorola |
| 22 |
MJF122 |
COMPLEMENTARY SILICON POWER DARLINGTONS |
Motorola |
| 23 |
MJF122 |
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220 Full-Pak Rail |
New Jersey Semiconductor |
| 24 |
MJF122 |
Power 5A 100V Darlington NPN |
ON Semiconductor |
| 25 |
MJF122 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
| 26 |
MJF122-D |
Complementary Power Darlingtons For Isolated Package Applications |
ON Semiconductor |
| 27 |
MSP430F122 |
16-Bit Ultra-Low-Power Microcontroller, 4kB ROM, 256B RAM, USART, Comparator |
Texas Instruments |
| 28 |
MSP430F1222 |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
| 29 |
MSP430F1222IDW |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
| 30 |
MSP430F1222IDWR |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
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