No. |
Part Name |
Description |
Manufacturer |
1 |
CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
2 |
CPF122F |
Product type: POTS splitter. System application: asymmetric digital subscriber line. |
YCL |
3 |
ERJA1AF122U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
4 |
ERJB1AF122U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
5 |
ERJB2AF122V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
6 |
F122 |
Shape and dimensions SITELESC package |
SESCOSEM |
7 |
F1220 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
8 |
F1221 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
9 |
F1222 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
11 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
12 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
13 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
14 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
15 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
16 |
MF122 |
COMPLEMENTARY SILICON POWER DARLINGTONS |
Motorola |
17 |
MJF122 |
COMPLEMENTARY SILICON POWER DARLINGTONS |
Motorola |
18 |
MJF122 |
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220 Full-Pak Rail |
New Jersey Semiconductor |
19 |
MJF122 |
Power 5A 100V Darlington NPN |
ON Semiconductor |
20 |
MJF122 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
21 |
MJF122-D |
Complementary Power Darlingtons For Isolated Package Applications |
ON Semiconductor |
22 |
MSP430F122 |
16-Bit Ultra-Low-Power Microcontroller, 4kB ROM, 256B RAM, USART, Comparator |
Texas Instruments |
23 |
MSP430F1222 |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
24 |
MSP430F1222IDW |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
25 |
MSP430F1222IDWR |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
26 |
MSP430F1222IPW |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
27 |
MSP430F1222IPWR |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
28 |
MSP430F1222IRHB |
MIXED SIGNAL MICROCONTROLLER |
Texas Instruments |
29 |
MSP430F1222IRHBR |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
30 |
MSP430F1222IRHBT |
16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, 10 bit ADC, 1 USART |
Texas Instruments |
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