| No. |
Part Name |
Description |
Manufacturer |
| 1 |
F1427 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2 |
FDMS86500L_F142 |
N-Channel PowerTrench® MOSFET 60V, 80A, 2.5mOhms |
Fairchild Semiconductor |
| 3 |
FDMS86540_F142 |
N-Channel PowerTrench® MOSFET 60V, 50A, 3.4mOhms |
Fairchild Semiconductor |
| 4 |
IF142 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 5 |
IRF142 |
N-Channel Power MOSFETs/ 27 A/ 60-100V |
Fairchild Semiconductor |
| 6 |
IRF142 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 7 |
IRF142 |
Trans MOSFET 100V 24A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 8 |
IRF142 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 9 |
IRF142 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A |
Siliconix |
| 10 |
IRF142R |
Trans MOSFET 100V 24A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
MGF1423B |
Small Signal GaAs FET |
Mitsubishi Electric Corporation |
| 12 |
Q62702-F1426 |
NPN SILICON RF TRANSISTOR (FOR UHF/VHF FREQUENCY CONVERTERS AND LOCAL OSCILLATORS) |
Siemens |
| 13 |
QRF1420T30 |
Fast Recovery Diode Module (200 Amp/1400 Volts) |
Powerex Power Semiconductors |
| 14 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 15 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| | | |
