| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1F1G |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes) |
Panjit International Inc |
| 2 |
1F1G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER |
Rectron Semiconductor |
| 3 |
AS273F1G13 |
Over-temperature detector |
ASTEC Semiconductor |
| 4 |
AS273F1GA |
Over-temperature detector |
ASTEC Semiconductor |
| 5 |
AS273F1GB |
Over-temperature detector |
ASTEC Semiconductor |
| 6 |
AS273F1GT |
Over-temperature detector |
ASTEC Semiconductor |
| 7 |
CLF1G0035-100 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 8 |
CLF1G0035-100P |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 9 |
CLF1G0035-50 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 10 |
CLF1G0035S-100 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 11 |
CLF1G0035S-100P |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 12 |
CLF1G0035S-50 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 13 |
CLF1G0060-10 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 14 |
CLF1G0060-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 15 |
CLF1G0060S-10 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 16 |
CLF1G0060S-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 17 |
CR6AF1GPP |
GLASS PASSIVATED JUNCTION FAST RECOVERY SILICON RECTIFIER 6.0 AMP 100 THRU 1000 VOLTS |
Central Semiconductor |
| 18 |
EF1G |
Efficient Fast Recovery Rectifier |
Comchip Technology |
| 19 |
EGF1G |
Rectifier: Standard |
Taiwan Semiconductor |
| 20 |
GF1G |
General Purpose Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 21 |
GF1G |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 22 |
GF1G |
Surface Mount Glass Passivated Rectifier, Forward Current 1.0A |
Vishay |
| 23 |
K9F1G08D0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 24 |
K9F1G08Q0A |
FLASH MEMORY |
Samsung Electronic |
| 25 |
K9F1G08Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 26 |
K9F1G08Q0M-PCB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
| 27 |
K9F1G08Q0M-PIB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
| 28 |
K9F1G08Q0M-YCB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
| 29 |
K9F1G08Q0M-YIB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
| 30 |
K9F1G08R0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| | | |
