| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 2 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 3 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 5 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 6 |
MBRF2040CT |
20 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 7 |
SBLF2040CT |
SCHOTTKY ISOLATED PLASTIC RECTIFIER |
General Semiconductor |
| 8 |
SBLF2040CT |
Dual Low VF Schottky Rectifier, Forward Current 20A |
Vishay |
| 9 |
SRF2040 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 10 |
TGF2040 |
DC - 20 GHz 400 um Discrete GaAs pHEMT |
Qorvo |
| | | |
