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Datasheets for F321

Datasheets found :: 195
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2SF321 Silicon-controlled rectifiers 5A TOSHIBA
2 ACF321825 3-Terminal Filters for Signal Line and DC Power Line SMD TDK Semiconductor
3 BD-F321RD DUAL DIGIT LED DISPLAYS Yellow Stone Corp
4 C8051F321 Full Speed USB, 16k ISP FLASH MCU Family Silicon Laboratories
5 DF321 Telephone touch dial circuit ITT Semiconductors
6 DS_K6F3216T6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung Electronic
7 EDI8F321024C15MMC 15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
8 EDI8F321024C15MNC 15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
9 EDI8F321024C15MZC 15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
10 EDI8F321024C20MMC 20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
11 EDI8F321024C20MNC 20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
12 EDI8F321024C20MZC 20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
13 EDI8F321024C25MMC 25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
14 EDI8F321024C25MNC 25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
15 EDI8F321024C25MZC 25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module White Electronic Designs
16 HD64F32138 ROM: 32Kbytes; RAM: 2Kbytes; V(cc): -0.3 to +7.0V; 4mA; 16-bit single-chip microcomputer Hitachi Semiconductor
17 HD64F32138A ROM: 32Kbytes; RAM: 2Kbytes; V(cc): -0.3 to +7.0V; 4mA; 16-bit single-chip microcomputer Hitachi Semiconductor
18 HD64F32138S ROM: 32Kbytes; RAM: 2Kbytes; V(cc): -0.3 to +7.0V; 4mA; 16-bit single-chip microcomputer Hitachi Semiconductor
19 IRF321 N-Channel Power MOSFETs/ 3.0 A/ 350-400 V Fairchild Semiconductor
20 IRF321 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
21 IRF321 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Intersil
22 IRF321 Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
23 IRF321 N-CHANNEL POWER MOSFETS Samsung Electronic
24 IRFF321 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
25 K6F3216T6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung Electronic
26 K6F3216T6M-F 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung Electronic
27 K6F3216U6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung Electronic
28 K6F3216U6M-F 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung Electronic
29 MRF321 10 W, 400 MHz, RF power transistor NPN silicon MA-Com
30 MRF321 RF POWER TRANSISTOR NPN SILICON Motorola


Datasheets found :: 195
Page: | 1 | 2 | 3 | 4 | 5 |



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