| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SF331 |
Silicon-controlled rectifiers 150A |
TOSHIBA |
| 2 |
ATF33143 |
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
Agilent (Hewlett-Packard) |
| 3 |
ATF331M4 |
Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
Agilent (Hewlett-Packard) |
| 4 |
AUIRF3315S |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 5 |
AUIRF3315STRL |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 6 |
AUIRF3315STRR |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 7 |
EB74 |
Application Note - A 10 watt 225-400MHz amplifier - MRF331 |
Motorola |
| 8 |
EETHC2F331JJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 9 |
EETHC2F331KJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 10 |
ERJA1AF331U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 11 |
ERJB1AF331U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 12 |
ERJB2AF331V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 13 |
ERZE05F331 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 14 |
ERZE07F331 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 15 |
ERZE08F331 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 16 |
ERZE10F331 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 17 |
ERZE11F331 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 18 |
GP1F331 |
Light transmitting/receiving units |
SHARP |
| 19 |
GP1F331A |
Light transmitting/receiving units |
SHARP |
| 20 |
IRF331 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 21 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 22 |
IRF331 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 23 |
IRF331 |
Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 24 |
IRF331 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 25 |
IRF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 26 |
IRF3315 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 27 |
IRF3315L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 28 |
IRF3315L |
Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 29 |
IRF3315LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 30 |
IRF3315PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| | | |
