No. |
Part Name |
Description |
Manufacturer |
1 |
ARF469AG |
RF ISM VDMOS Power Transistors |
Microsemi |
2 |
ARF469BG |
RF ISM VDMOS Power Transistors |
Microsemi |
3 |
BF469 |
Silicon NPN Epitaxial Planar RF Transistor |
AEG-TELEFUNKEN |
4 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
5 |
BF469 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
6 |
BF469 |
Silicon NPN Epitaxial-Planar High Voltage Transistor |
IPRS Baneasa |
7 |
BF469 |
Trans GP BJT NPN 250V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
8 |
BF469 |
NPN high-voltage transistors |
Philips |
9 |
BF469 |
NPN SILICON PLANAR TRANSISTORS |
Siemens |
10 |
BF469 |
Silicon NPN triple diffused transistor |
TOSHIBA |
11 |
BF469 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
12 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
13 |
KF469 |
NPN transistor for output stages of videoamplifiers |
Tesla Elektronicke |
14 |
NX8562LF469-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1546.91 nm. Frequency 193.80 THz. Anode floating. FC-PC connector. |
NEC |
15 |
NX8563LF469-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1546.91 nm. Frequency 193.80 THz. FC-PC connector. Anode floating. |
NEC |
16 |
SF369 |
Si-npn RF transistor, possibly equivalent BF469 |
RFT |
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