No. |
Part Name |
Description |
Manufacturer |
1 |
BRF61002 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
2 |
BRF61002J |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
3 |
BRF61004 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
4 |
IRF6100 |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
5 |
IRF6100PBF |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
6 |
IRF6100TR |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
7 |
NX8562LF6100-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1610.05 nm. Frequency 186.20 THz. Anode floating. FC-PC connector. |
NEC |
8 |
NX8563LF6100-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1610.05 nm. Frequency 186.20 THz. FC-PC connector. Anode floating. |
NEC |
9 |
PB-IRF6100 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
10 |
RF6100-1 |
3 V 900 MHz Linear Power Amplifier Module |
RF Micro Devices |
11 |
RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module |
RF Micro Devices |
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