| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BRF61002 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 2 |
BRF61002J |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 3 |
BRF61004 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 4 |
IRF6100 |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 5 |
IRF6100PBF |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 6 |
IRF6100TR |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 7 |
NX8562LF6100-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1610.05 nm. Frequency 186.20 THz. Anode floating. FC-PC connector. |
NEC |
| 8 |
NX8563LF6100-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1610.05 nm. Frequency 186.20 THz. FC-PC connector. Anode floating. |
NEC |
| 9 |
PB-IRF6100 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 10 |
RF6100-1 |
3 V 900 MHz Linear Power Amplifier Module |
RF Micro Devices |
| 11 |
RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module |
RF Micro Devices |
| | | |
