| No. |
Part Name |
Description |
Manufacturer |
| 1 |
54F632 |
32-Bit Parallel Error Detection and Correction Circuit |
Fairchild Semiconductor |
| 2 |
74F632 |
32-Bit Parallel Error Detection and Correction Circuit |
Fairchild Semiconductor |
| 3 |
DP8406D(74F632DC) |
32-Bit Parallel Error Detection and Correction Circuit |
National Semiconductor |
| 4 |
DP8406QV(74F632QC) |
32-Bit Parallel Error Detection and Correction Circuit |
National Semiconductor |
| 5 |
DP8406V(74F632VC) |
32-Bit Parallel Error Detection and Correction Circuit |
National Semiconductor |
| 6 |
IRF632 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 7 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 8 |
IRF632 |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 9 |
IRF632 |
N-Channel Power MOSFET |
Samsung Electronic |
| 10 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 11 |
IRF632R |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12 |
YTF632 |
Field Effect Transistor - Silicon N Channel MOS type (π-MOS) |
TOSHIBA |
| | | |
