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Datasheets for F6616

Datasheets found :: 28
Page: | 1 |
No. Part Name Description Manufacturer
1 IRF6616 A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. International Rectifier
2 IRF6616TR1 Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. International Rectifier
3 IRF6616TR1PBF A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. International Rectifier
4 K4F661611D, K4F641611D 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
5 K4F661612B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
6 K4F661612B-L 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
7 K4F661612B-TC 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
8 K4F661612B-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
9 K4F661612B-TC50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns Samsung Electronic
10 K4F661612B-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
11 K4F661612B-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
12 K4F661612B-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic
13 K4F661612B-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
14 K4F661612C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
15 K4F661612C-L 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
16 K4F661612C-TC 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
17 K4F661612C-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
18 K4F661612C-TC50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns Samsung Electronic
19 K4F661612C-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
20 K4F661612C-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
21 K4F661612C-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic
22 K4F661612C-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
23 K4F661612D, K4F641612D 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
24 K4F661612D, K4F641612D 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
25 K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
26 K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
27 PB-IRF6616 Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. International Rectifier
28 STR-F6616 SMPS primary IC, 400V, 190W Sanken


Datasheets found :: 28
Page: | 1 |



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