| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF679 |
Silicon PNP RF Transistor |
AEG-TELEFUNKEN |
| 2 |
BF679 |
PNP silicon transistor, UHF |
SESCOSEM |
| 3 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
| 4 |
BF679 |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
| 5 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 6 |
BF679M |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
| 7 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 8 |
BF679S |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
| 9 |
BF679T |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 10 |
IRF6794M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 11 |
IRF6794MTR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 12 |
IRF6794MTRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 13 |
IRF6795M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 14 |
IRF6795MTR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 15 |
IRF6797M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. |
International Rectifier |
| 16 |
IRF6797MTRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. |
International Rectifier |
| 17 |
IRF6798M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 37 amperes optimized with low on resistance. |
International Rectifier |
| 18 |
IRF6798MTR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 37 amperes optimized with low on resistance. |
International Rectifier |
| 19 |
NX8562LF679-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1567.95 nm. Frequency 191.20 THz. Anode floating. FC-PC connector. |
NEC |
| 20 |
NX8563LF679-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1567.95 nm. Frequency 191.20 THz. FC-PC connector. Anode floating. |
NEC |
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