| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ERJA1AF912U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 2 |
ERJB1AF912U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 3 |
ERJB2AF912V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 4 |
IRF9120 |
P-Channel Power MOSFET |
Samsung Electronic |
| 5 |
IRF9121 |
P-Channel Power MOSFET |
Samsung Electronic |
| 6 |
IRF9122 |
P-Channel Power MOSFET |
Samsung Electronic |
| 7 |
IRF9123 |
P-Channel Power MOSFET |
Samsung Electronic |
| 8 |
IRFF9120 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 9 |
IRFF9120 |
4A/ 100V/ 0.60 Ohm/ P-Channel Power MOSFET |
Intersil |
| 10 |
IRFF9120 |
Trans MOSFET P-CH 100V 4A 3-Pin TO-39 |
New Jersey Semiconductor |
| 11 |
IRFF9120 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V |
Siliconix |
| 12 |
IRFF9121 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V |
Siliconix |
| 13 |
IRFF9122 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V |
Siliconix |
| 14 |
IRFF9123 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V |
Siliconix |
| 15 |
MRF912 |
NPN silicon high frequency transistor, high-gain, low-noise, small-signal |
Motorola |
| 16 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 17 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 18 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 19 |
MRF9120LR3 |
RF Power Field Effect Transistors |
Motorola |
| 20 |
MRF9120R3 |
880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
| 21 |
MRF9120R3 |
RF Power Field Effect Transistors |
Motorola |
| 22 |
NX8562LF912-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1591.25 nm. Frequency 188.40 THz. Anode floating. FC-PC connector. |
NEC |
| 23 |
NX8563LF912-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1591.25 nm. Frequency 188.40 THz. FC-PC connector. Anode floating. |
NEC |
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