No. |
Part Name |
Description |
Manufacturer |
1 |
ERJA1AF912U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
2 |
ERJB1AF912U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
3 |
ERJB2AF912V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
4 |
IRFF9120 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
5 |
IRFF9120 |
4A/ 100V/ 0.60 Ohm/ P-Channel Power MOSFET |
Intersil |
6 |
IRFF9120 |
Trans MOSFET P-CH 100V 4A 3-Pin TO-39 |
New Jersey Semiconductor |
7 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
8 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
9 |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
10 |
MRF9120LR3 |
RF Power Field Effect Transistors |
Motorola |
11 |
MRF9120R3 |
880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
12 |
MRF9120R3 |
RF Power Field Effect Transistors |
Motorola |
13 |
NX8562LF912-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1591.25 nm. Frequency 188.40 THz. Anode floating. FC-PC connector. |
NEC |
14 |
NX8563LF912-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1591.25 nm. Frequency 188.40 THz. FC-PC connector. Anode floating. |
NEC |
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