No. |
Part Name |
Description |
Manufacturer |
1 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
2 |
BF961 |
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50 |
New Jersey Semiconductor |
3 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
4 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
5 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
6 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
7 |
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
8 |
IRF9610 |
P-Channel Power MOSFET |
Samsung Electronic |
9 |
IRF9610S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
10 |
IRF9610STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
11 |
IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
12 |
IRF9611 |
P-Channel Power MOSFET |
Samsung Electronic |
13 |
IRF9612 |
P-Channel Power MOSFET |
Samsung Electronic |
14 |
IRF9613 |
P-Channel Power MOSFET |
Samsung Electronic |
15 |
MRF961 |
NPN silicon high frequency transistor fT=4.5GHz 50mA |
Motorola |
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