| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 2 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 3 |
IRF9640 |
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 4 |
IRF9640 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5 |
IRF9640 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 6 |
IRF9640 |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 7 |
IRF9640 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 8 |
IRF9640L |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 9 |
IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 10 |
IRF9640S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11 |
IRF9640SPBF |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12 |
IRF9640STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13 |
IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14 |
IRF9640STRR |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 15 |
IRF9641 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 16 |
IRF9642 |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 17 |
IRF9642 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 18 |
IRF9643 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 19 |
KF964 |
TETRODE MOS FOR VHF |
Tesla Elektronicke |
| | | |
