| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 2 |
BF998 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 3 |
BF998 |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 4 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 5 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 6 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 7 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 8 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 9 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 10 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 11 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 12 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 13 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 15 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 16 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 17 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 18 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 19 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 20 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 21 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 22 |
RF9986 |
PCS LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| 23 |
RF9986PCBA |
PCS LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| | | |
