| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CFB1342 |
60.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 500 hFE. |
Continental Device India Limited |
| 2 |
CFB1370 |
PNP Silicon Epitaxial Power Transistor |
Continental Device India Limited |
| 3 |
CFD2059 |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367 |
Continental Device India Limited |
| 4 |
CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O |
Continental Device India Limited |
| 5 |
CFD2059R |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R |
Continental Device India Limited |
| 6 |
CFD2059Y |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFB1367Y |
Continental Device India Limited |
| 7 |
IRFB13N50A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 8 |
IRFB13N50APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 9 |
SMFB13 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 10 |
SMFB13L |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 11 |
USFB13 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 12 |
USFB13A |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 13 |
USFB13L |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| | | |
