No. |
Part Name |
Description |
Manufacturer |
1 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
2 |
22FD11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
3 |
EFD110 |
Germanium diode |
IPRS Baneasa |
4 |
EFD110 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
5 |
EFD110 |
Germanium Point Contact Diode |
IPRS Baneasa |
6 |
EFD110 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
7 |
EFD111 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
8 |
EFD112 |
Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper |
IPRS Baneasa |
9 |
EFD112 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
10 |
EFD115 |
Germanium diode |
IPRS Baneasa |
11 |
EFD115 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
12 |
EFD115 |
Germanium Point Contact Diodes |
IPRS Baneasa |
13 |
EFD115 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
14 |
IRFD110 |
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
15 |
IRFD110 |
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
Intersil |
16 |
IRFD110 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 1A |
Siliconix |
17 |
IRFD112 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
18 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
19 |
IRFD113 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.8A |
Siliconix |
20 |
SFD118 |
Germanium Diode |
COSEM |
21 |
SFD118A |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
22 |
SFD119 |
Germanium Diode |
COSEM |
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