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Datasheets found :: 3
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| 1 |
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | EFD112 | Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper | IPRS Baneasa |
| 2 | EFD112 | Tungsten-Germanium point contact diode | IPRS Baneasa |
| 3 | IRFD112 | Power MOSFET field effect power transistor. | General Electric Solid State |
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Datasheets found :: 3
Page:
| 1 |
|