| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 2 |
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 3 |
IRFD210 |
0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 4 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
| 5 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
| 6 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
| 7 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
| 8 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
| 9 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
| 10 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
| 11 |
IRFD214 |
250V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 12 |
SVFD21A156M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 13 |
SVFD21A167M |
Resign molded chip fuse built-in |
NEC |
| 14 |
SVFD21A336M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 15 |
SVFD21C156M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 16 |
SVFD21C226M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 17 |
SVFD21D106M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 18 |
SVFD21E685M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 19 |
SVFD21H335M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| 20 |
SVFD21V475M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
| | | |
