No. |
Part Name |
Description |
Manufacturer |
1 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
2 |
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
3 |
IRFD210 |
0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
4 |
IRFD210 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 0.6A |
Siliconix |
5 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
6 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
7 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
8 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
9 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
10 |
IRFD213 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 0.45A |
Siliconix |
11 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
12 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
13 |
IRFD214 |
250V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
14 |
SVFD21A156M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
15 |
SVFD21A167M |
Resign molded chip fuse built-in |
NEC |
16 |
SVFD21A336M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
17 |
SVFD21C156M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
18 |
SVFD21C226M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
19 |
SVFD21D106M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
20 |
SVFD21E685M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
21 |
SVFD21H335M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
22 |
SVFD21V475M |
Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A |
NEC |
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