| No. |
Part Name |
Description |
Manufacturer |
| 1 |
03P4MGC |
P-gate all diffused MOLD type thyristor |
NEC |
| 2 |
03P5MGC |
P-gate all diffused MOLD type thyristor |
NEC |
| 3 |
05GU4B48 |
SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK |
GOOD-ARK Electronics |
| 4 |
05NH45 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE |
TOSHIBA |
| 5 |
05NH46 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 6 |
05NU41 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 7 |
05NU42 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 8 |
0R06NXZ31 |
Silicon diffused junction high-voltage rectifier 10kV |
TOSHIBA |
| 9 |
0R06YXZ31 |
Silicon diffused junction high-voltage rectifier 20kV |
TOSHIBA |
| 10 |
0R1NYZ41 |
Silicon diffused junction high-voltage rectifier 100kV |
TOSHIBA |
| 11 |
0R1QYZ41 |
Silicon diffused junction high-voltage rectifier 125kV |
TOSHIBA |
| 12 |
0R1TYZ41 |
Silicon diffused junction high-voltage rectifier 150kV |
TOSHIBA |
| 13 |
0R6JXZ33 |
Silicon diffused junction high-voltage rectifier 6kV |
TOSHIBA |
| 14 |
0R6LXZ33 |
Silicon diffused junction high-voltage rectifier 8kV |
TOSHIBA |
| 15 |
0R6QXZ33 |
Silicon diffused junction high-voltage rectifier 12kV |
TOSHIBA |
| 16 |
0R6UXZ31 |
Silicon diffused junction high-voltage rectifier 14kV 600mA |
TOSHIBA |
| 17 |
0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 18 |
1000GXHH23 |
Fast Recovery Rectifier Silicon Diffused Type |
TOSHIBA |
| 19 |
108T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 20 |
109T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 21 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 22 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 23 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 24 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 25 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 26 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 27 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 28 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 29 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
| 30 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
| | | |
