| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFG51 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 2 |
ERG2FG510H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 3 |
ERG2FG511H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 4 |
ERG2FG512H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 5 |
ERG2FG513H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 6 |
ERG3FG510 |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG3FG510H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG3FG511H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
ERG3FG512H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 10 |
ERG3FG513H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 11 |
ERG5FG510H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 12 |
ERG5FG511H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 13 |
ERG5FG512H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 14 |
ERG5FG513H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 15 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 16 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 17 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| | | |
