| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FN6094 |
Ultra Low ON-Resistance/ Low Voltage/ Single Supply/ Quad SPDT (Dual DPDT) Analog Switch |
Intersil |
| 2 |
IFN6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 3 |
IFN6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 4 |
IXFN60N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 5 |
IXFN64N50P |
PolarHVTM HiPerFETPower MOSFET |
IXYS Corporation |
| 6 |
IXFN66N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 7 |
K4S64323LH-FN60 |
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
| 8 |
LC51024MC-52FN672C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 9 |
LC51024MC-75FN672C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 10 |
LC51024MC-75FN672I |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 11 |
LC51024MV-52FN672C |
3.3V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 12 |
LC51024MV-75FN672C |
3.3V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 13 |
LC51024MV-75FN672I |
3.3V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
| 14 |
MCM67C518FN6 |
32K x 18 Bit BurstRAM Synchronous Fast Static RAM |
Motorola |
| 15 |
MCM67C618FN6 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
Motorola |
| 16 |
MCM67J518FN6 |
32K x 18 Bit BurstRAM Synchronous Fast Static RA |
Motorola |
| 17 |
MN103SFN6D |
32-bit High Performance Microcomputers MN103S Series |
Panasonic |
| 18 |
MN103SFN6G |
32-bit High Performance Microcomputers MN103S Series |
Panasonic |
| 19 |
MN103SFN6X |
32-bit High Performance Microcomputers MN103S Series |
Panasonic |
| 20 |
MN103SFN6Y |
32-bit High Performance Microcomputers MN103S Series |
Panasonic |
| 21 |
NTLUS3A18PZC |
Power MOSFET -20V 8.2A 18 mOhm Single P-Channel UDFN6 |
ON Semiconductor |
| 22 |
NVLJD4007NZ |
30 V 245 mA dual N-Channel Small Signal MOSFET in WDFN6 2x2 mm package |
ON Semiconductor |
| 23 |
RFN60TS6D |
Super Fast Recovery Diode |
ROHM |
| 24 |
RFN60TS6DGC11 |
Super Fast Recovery Diode |
ROHM |
| 25 |
RFN6BM2D |
Super Fast Recovery Diode |
ROHM |
| 26 |
RFN6BM2DFH |
Super Fast Recovery Diode (corresponds to AEC-Q101) |
ROHM |
| 27 |
RFN6BM2DFHTL |
Super Fast Recovery Diode (corresponds to AEC-Q101) |
ROHM |
| 28 |
RFN6BM2DTL |
Super Fast Recovery Diode |
ROHM |
| 29 |
RFN6T2D |
Super Fast Recovery Diode |
ROHM |
| 30 |
ST1S03 |
1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 |
ST Microelectronics |
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