No. |
Part Name |
Description |
Manufacturer |
1 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
2 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
3 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
4 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
5 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
6 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
7 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
8 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
9 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
10 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
11 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
12 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
13 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
14 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
15 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
16 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
17 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
18 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
19 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
20 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
21 |
BSV16 |
Silicon PNP epitaxial planar transistor for medium power AF amplifiers and for AF switching applications |
AEG-TELEFUNKEN |
22 |
BSX46 |
Silicon NPN epitaxial planar transistor for medium power AF amplifiers and for AF switching applications |
AEG-TELEFUNKEN |
23 |
MP3730 |
PNP Germanium power transistor designed for medium power, vertical deflection amplifier in television receivers |
Motorola |
24 |
MP3731 |
PNP Germanium power transistor designed for medium power, horizontal amplifier in television receivers |
Motorola |
25 |
NCP1027 |
High−Voltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power |
ON Semiconductor |
26 |
NCP1028 |
High-Voltage Switcher for Medium Power offline SMPS featuring low standby power |
ON Semiconductor |
27 |
Q62702-F1590 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
28 |
QM200DY-HBK |
100A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
29 |
QM200DY-HK |
100A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
30 |
QM400HA-M |
400A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
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