| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 2 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 3 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 4 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 6 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 7 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 8 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 9 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 10 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 11 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 12 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 14 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 15 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 16 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 17 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 18 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 19 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 20 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 21 |
BSV16 |
Silicon PNP epitaxial planar transistor for medium power AF amplifiers and for AF switching applications |
AEG-TELEFUNKEN |
| 22 |
BSX46 |
Silicon NPN epitaxial planar transistor for medium power AF amplifiers and for AF switching applications |
AEG-TELEFUNKEN |
| 23 |
MP3730 |
PNP Germanium power transistor designed for medium power, vertical deflection amplifier in television receivers |
Motorola |
| 24 |
MP3731 |
PNP Germanium power transistor designed for medium power, horizontal amplifier in television receivers |
Motorola |
| 25 |
NCP1027 |
High−Voltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power |
ON Semiconductor |
| 26 |
NCP1028 |
High-Voltage Switcher for Medium Power offline SMPS featuring low standby power |
ON Semiconductor |
| 27 |
Q62702-F1590 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 28 |
QM200DY-HBK |
100A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
| 29 |
QM200DY-HK |
100A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
| 30 |
QM400HA-M |
400A - transistor module for medium power switching use, insulated type |
Mitsubishi Electric Corporation |
| | | |
