No. |
Part Name |
Description |
Manufacturer |
1 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
2 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
3 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
4 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
5 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
6 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
7 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
8 |
1DI300Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
9 |
1DI300Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
10 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
11 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
12 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
13 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
14 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
15 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
16 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
17 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
18 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
19 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
20 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
21 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
22 |
1SVR405661R0000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
23 |
1SVR405662R0000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
24 |
1SVR405662R1000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
25 |
1SVR405663R0000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
26 |
1SVR405663R1000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
27 |
1SVR405664R0000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
28 |
1SVR405664R0100 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
29 |
1SVR405664R1000 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
30 |
1SVR405664R1100 |
Accessories for pluggable interface relays CR-U Pluggable function modules |
ABB |
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