| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BYW29FP-200 |
HIGH EFFICIENCY FAST RECOVERY DIODES |
SGS Thomson Microelectronics |
| 2 |
BYW29FP-200 |
HIGH EFFICIENCY FAST RECOVERY DIODES |
ST Microelectronics |
| 3 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 4 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 5 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| 6 |
BYW80FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 7 |
BYW80FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| 8 |
HM6116FP-2 |
2048-word X 8bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 9 |
HM6116LFP-2 |
2048-word X 8bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 10 |
HN27C256FP-25T |
32768 WORD X 8 BIT CMOS ONE TIME ELECTICALLY PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 11 |
HN28F101FP-20 |
131072-word ?? 8-bit CMOS Flash Memory |
etc |
| 12 |
HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Hitachi Semiconductor |
| 13 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 14 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 15 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 16 |
HY5DS283222BFP-28 |
128M(4Mx32) GDDR SDRAM |
Hynix Semiconductor |
| 17 |
M5M82C59AFP-2 |
The M5M82C59AFP,-2 is programmable LSI Interupt control |
Mitsubishi Electric Corporation |
| | | |
