No. |
Part Name |
Description |
Manufacturer |
1 |
BYW29FP-200 |
HIGH EFFICIENCY FAST RECOVERY DIODES |
SGS Thomson Microelectronics |
2 |
BYW29FP-200 |
HIGH EFFICIENCY FAST RECOVERY DIODES |
ST Microelectronics |
3 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
4 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
5 |
BYW51FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
6 |
BYW80FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
7 |
BYW80FP-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
8 |
FP-24 |
Flat Package FP24, informations |
Hitachi Semiconductor |
9 |
HM6116FP-2 |
2048-word x 8-bit High Speed Static CMOS RAM |
Hitachi Semiconductor |
10 |
HM6116FP-2 |
2048-word X 8bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
11 |
HM6116LFP-2 |
2048-word x 8-bit High Speed Static CMOS RAM |
Hitachi Semiconductor |
12 |
HM6116LFP-2 |
2048-word X 8bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
13 |
HN27C256FP-25T |
32768 WORD X 8 BIT CMOS ONE TIME ELECTICALLY PROGRAMMABLE ROM |
Hitachi Semiconductor |
14 |
HN28F101FP-20 |
131072-word ?? 8-bit CMOS Flash Memory |
etc |
15 |
HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Hitachi Semiconductor |
16 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
17 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
18 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
19 |
HY5DS283222BFP-28 |
128M(4Mx32) GDDR SDRAM |
Hynix Semiconductor |
20 |
M5M82C59AFP-2 |
The M5M82C59AFP,-2 is programmable LSI Interupt control |
Mitsubishi Electric Corporation |
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