No. |
Part Name |
Description |
Manufacturer |
1 |
IXFTN100 |
HiPerFET Power MOSFETs |
IXYS Corporation |
2 |
LTI202FTN |
200 V negative center tap 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
3 |
LTI202UFTN |
200 V negative center tap 20-25 A forward current, 3000 ns recovery time |
Voltage Multipliers |
4 |
LTI206FTN |
600 V negative center tap 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
5 |
LTI206UFTN |
600 V negative center tap 20-25 A forward current, 3000 ns recovery time |
Voltage Multipliers |
6 |
LTI210FTN |
1000 V negative center tap 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
7 |
LTI210UFTN |
1000 V negative center tap 20-25 A forward current, 3000 ns recovery time |
Voltage Multipliers |
8 |
M368L3223FTN |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
9 |
M368L3223FTN-CB3LAA |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
10 |
M368L6423FTN |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
11 |
M368L6423FTN-CB3B0 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
12 |
MB85R1002PFTN |
Memory FRAM |
Fujitsu Microelectronics |
13 |
MB85R256PFTN |
Memory FRAM(Ferroelectric Random Access Memory) |
Fuji Electric |
14 |
MB85R256PFTN |
2.7Gbps Laser Driver with Modulation Compensation |
MAXIM - Dallas Semiconductor |
15 |
MBM29DL161BD12PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
16 |
MBM29DL161BD70PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
17 |
MBM29DL161BD90PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
18 |
MBM29DL161BE70PFTN |
16M (2M x 8/1M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
19 |
MBM29DL161TD12PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
20 |
MBM29DL161TD70PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
21 |
MBM29DL161TD90PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
22 |
MBM29DL161TE70PFTN |
16M (2M x 8/1M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
23 |
MBM29DL162BD12PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
24 |
MBM29DL162BD70PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
25 |
MBM29DL162BD90PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
26 |
MBM29DL162BE70PFTN |
16M (2M x 8/1M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
27 |
MBM29DL162TD12PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
28 |
MBM29DL162TD70PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
29 |
MBM29DL162TD90PFTN |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
30 |
MBM29DL162TE70PFTN |
16M (2M x 8/1M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
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