| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AFY34 |
Germanium high-frequency MESA PNP transistor with coaxial package |
Siemens |
| 2 |
AFY37 |
Transistor PNP |
Siemens |
| 3 |
AFY37 |
PNP MESA Transistor |
Siemens |
| 4 |
AFY37 |
PNP Transistor |
Siemens |
| 5 |
AFY39 |
Transistor PNP |
Siemens |
| 6 |
AFY39 |
PNP MESA Transistor |
Siemens |
| 7 |
AFY39 |
PNP Transistor |
Siemens |
| 8 |
BFY33 |
NPN silicon planar transistor |
Mikroelektronikai Vallalat |
| 9 |
BFY33 |
NPN Silicon Transistor |
Siemens |
| 10 |
BFY33 |
NPN Transistor industrial type |
Siemens |
| 11 |
BFY33 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 12 |
BFY34 |
NPN silicon planar transistor |
Mikroelektronikai Vallalat |
| 13 |
BFY34 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 14 |
BFY34 |
NPN Transistor industrial type |
Siemens |
| 15 |
BFY34 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 16 |
BFY39 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 17 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 18 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 19 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 20 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 21 |
EFY3864X |
H I G H B R I G H T N E S S C O L O R |
Stanley Electric |
| 22 |
FY3864X |
H I G H B R I G H T N E S S C O L O R |
Stanley Electric |
| 23 |
FY3ABJ-03 |
Power MOSFETs: FY Series |
Mitsubishi Electric Corporation |
| 24 |
FY3ABJ-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 25 |
FY3ABJ-03 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 26 |
FY3ACJ-03F |
Power MOSFETs: FY Series |
Mitsubishi Electric Corporation |
| 27 |
FY3ACJ-03F |
Transistors>Switching/MOSFETs |
Renesas |
| 28 |
IRFY330 |
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
SemeLAB |
| 29 |
IRFY340 |
400V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 30 |
IRFY340 |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
SemeLAB |
| | | |
