| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5807 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 2 |
1N5808 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 3 |
1N5809 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 4 |
1N5810 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 5 |
1N5811 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 6 |
CP800 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 7 |
CP801 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 8 |
CP802 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 9 |
CP804 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 10 |
CP806 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 11 |
CP808 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 12 |
TAA522 |
Universal operational amplifier (metal housing 8A) with temp. range -55° to +125°C |
Siemens |
| 13 |
UES1301 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 14 |
UES1302 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 15 |
UES1303 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 16 |
UES1304 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 17 |
UES1305 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| 18 |
UES1306 |
Diode Switching 8A 2-Pin GPR-4AM |
New Jersey Semiconductor |
| | | |
