No. |
Part Name |
Description |
Manufacturer |
1 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
2 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
3 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
4 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
5 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
6 |
ADCMP581 |
Ultrafast SiGe Voltage Comparator w/Reduced Swing NECL Output Drivers |
Analog Devices |
7 |
ADE7761 |
Single Phase Energy Metering IC with On-Chip Fault Detection and Missing Neutral Detection |
Analog Devices |
8 |
ADE7761ARS |
Single Phase Energy Metering IC with On-Chip Fault Detection and Missing Neutral Detection |
Analog Devices |
9 |
ADE7761ARS-REF |
Single Phase Energy Metering IC with On-Chip Fault Detection and Missing Neutral Detection |
Analog Devices |
10 |
ADE7761ARSRL |
Single Phase Energy Metering IC with On-Chip Fault Detection and Missing Neutral Detection |
Analog Devices |
11 |
ADE7761B |
Energy Metering IC with On-Chip Fault and Missing Neutral Detection |
Analog Devices |
12 |
AMIS-42670 |
High-Speed CAN Transceiver for Long Networks |
ON Semiconductor |
13 |
AN-267 |
Application Note - Matching Network designs with computer solutions |
Motorola |
14 |
AN-721 |
Application Note - Impedance matching networks applied to RF power transistors |
Motorola |
15 |
APPLICATION-NOTE |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 |
NEC |
16 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
17 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
18 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
19 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
20 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
21 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
22 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
23 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
24 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
25 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
26 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
27 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
28 |
GS3018 |
Class D Preamp with Anti-Aliasing Network |
Gennum Corporation |
29 |
MAX1600 |
Dual-Channel CardBus and PCMCIA VCC VPP Power Switching Networks |
MAXIM - Dallas Semiconductor |
30 |
MAX1600EAI |
Dual-Channel CardBus and PCMCIA VCC/VPP Power-Switching Networks |
MAXIM - Dallas Semiconductor |
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