| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5162 |
150AMP AVG SILICON RECTIFIER DIODES |
International Rectifier |
| 2 |
2SC4331 |
High-speed switching silicon power transistor |
NEC |
| 3 |
2SC4331-Z |
High-speed switching silicon power transistor |
NEC |
| 4 |
2SC4342 |
High-speed switching silicon transistor |
NEC |
| 5 |
5STP33L2200 |
Patented free-floating silicon technology |
ABB |
| 6 |
5STP33L2600 |
Patented free-floating silicon technology |
ABB |
| 7 |
5STP33L2800 |
Patented free-floating silicon technology |
ABB |
| 8 |
BCR400W |
Analog Silicon SSICs - Low voltage drop of 0.7V |
Infineon |
| 9 |
BCR401R |
Analog Silicon SSICs - output current: 10..60mA |
Infineon |
| 10 |
BCR402R |
Analog Silicon SSICs - output current: 20..60mA |
Infineon |
| 11 |
BCR402U |
Analog Silicon SSICs - LED Driver in SC74 |
Infineon |
| 12 |
BCR410W |
Analog Silicon SSICs - Ultra low voltage drop of 0.1V |
Infineon |
| 13 |
CMUD2836 |
ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE |
Central Semiconductor |
| 14 |
CMUD2838 |
ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE |
Central Semiconductor |
| 15 |
CMUD7000 |
ULTRAmini. SURFACE MOUNT DUAL SERIES HIGH SPEED SWITCHING SILICON DIODE |
Central Semiconductor |
| 16 |
HD74HCT1G32CME |
High Speed CMOS two input OR gate Using Silicon Gate CMOS Process |
Renesas |
| 17 |
JANS2N2219 |
NPN SWITCHING SILICON TRANSISTOR |
Microsemi |
| 18 |
JANS2N2219A |
NPN SWITCHING SILICON TRANSISTOR |
Microsemi |
| 19 |
MBD201 |
Detector and switching silicon Hot-Carrier diode (schottky barrier diode) |
Motorola |
| 20 |
MMBD201 |
Detector and switching silicon Hot-Carrier diode (schottky barrier diode) |
Motorola |
| 21 |
MMBD201L |
Detector and switching silicon Hot-Carrier diode (schottky barrier diode) |
Motorola |
| 22 |
MMBD301L |
Detector and switching silicon Hot-Carrier diode (schottky barrier diode) |
Motorola |
| 23 |
SGSD310 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 24 |
SGSD311 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 25 |
SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 26 |
SVC208 |
Varactor Diode (IOCAP) for FM Low-Voltage Electronic Tuning Silicon Diffused Junction Type |
SANYO |
| 27 |
SVC323 |
Varactor Diode for AM Low-Voltage Electronic Tuning Silicon Diffused Junction Type |
SANYO |
| 28 |
SVC343 |
Varactor Diode for AM Low-Voltage Electronic Tuning Silicon Diffused Junction Type |
SANYO |
| 29 |
SVC344 |
Varactor Diode for AM Low-Voltage Electronic Tuning Silicon Diffused Junction Type |
SANYO |
| 30 |
SVC345 |
Varactor Diode for AM Low-Voltage Electronic Tuning Silicon Diffused Junction Type |
SANYO |
| | | |
