| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2PG006 |
Silicon N-channel enhancement IGBT |
Panasonic |
| 2 |
CLF1G0060-10 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 3 |
CLF1G0060-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 4 |
CLF1G0060S-10 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 5 |
CLF1G0060S-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 6 |
ECG006 |
InGaP HBT Gain Block |
WJ Communications |
| 7 |
ECG006B |
InGaP HBT Gain Block |
WJ Communications |
| 8 |
ECG006B-G |
InGaP HBT Gain Block |
WJ Communications |
| 9 |
ECG006B-PCB |
InGaP HBT Gain Block |
WJ Communications |
| 10 |
ECG006C |
InGaP HBT Gain Block |
WJ Communications |
| 11 |
ECG006C-PCB |
InGaP HBT Gain Block |
WJ Communications |
| 12 |
ECG006F |
InGaP HBT Gain Block |
WJ Communications |
| 13 |
ECG006F-PCB |
InGaP HBT Gain Block |
WJ Communications |
| 14 |
FX5545G006 |
Industry Smallest and Low Profile 7.5W 1.5A DC/DC Boost Converter with High Output Density Power |
Vishay |
| 15 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 16 |
R9G00612 |
600V, 1200A general purpose single diode |
Powerex Power Semiconductors |
| 17 |
R9G00618 |
600V, 1800A general purpose single diode |
Powerex Power Semiconductors |
| 18 |
R9G00622 |
600V, 2200A general purpose single diode |
Powerex Power Semiconductors |
| 19 |
T9G00610 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
| 20 |
T9G0061003DH |
600V, 1000A phase control single thyristor |
Powerex Power Semiconductors |
| 21 |
T9G00612 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
| 22 |
T9G0061203DH |
600V, 1200A phase control single thyristor |
Powerex Power Semiconductors |
| | | |
