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Datasheets for GAAS

Datasheets found :: 7542
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Anadigics Inc
2 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
3 13PD100-ST The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... Anadigics Inc
4 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... Anadigics Inc
5 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
6 13PD150-ST The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... Anadigics Inc
7 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... Anadigics Inc
8 174CQY Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor Mullard
9 183CQY Visible (red) electroluminiscent GaAsP light emitting diode Mullard
10 1N6264 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
11 1N6264 GAAS INFRARED EMITTING DIODE QT Optoelectronics
12 1N6265 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
13 1N6265 GAAS INFRARED EMITTING DIODE QT Optoelectronics
14 1N6266 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
15 1N6266 GAAS INFRARED EMITTING DIODE QT Optoelectronics
16 2SK2685 GaAs HEMT Hitachi Semiconductor
17 2SK3001 GaAs HEMT Low Noise Amplifier Hitachi Semiconductor
18 319SPA-V6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
19 319SPA-W6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
20 319SPA-X6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
21 35PD10M The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... Anadigics Inc
22 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... Anadigics Inc
23 3SK147 GaAs N-Channel Dual-Gate MES FET SONY
24 3SK148 GaAs N-Channel Dual-Gate MES FET SONY
25 3SK149 GaAs N-Channel Dual-Gate MES FET SONY
26 3SK165 GaAs N-channel Dual Gate MES FET SONY
27 3SK165A GaAs N-channel Dual Gate MES FET SONY
28 3SK165A-0 GaAs N-channel Dual Gate MES FET SONY
29 3SK165A-1 GaAs N-channel Dual Gate MES FET SONY
30 3SK166 GaAs N-channel Dual Gate MES FET SONY


Datasheets found :: 7542
Page: | 1 | 2 | 3 | 4 | 5 |



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