| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CF007-01 |
2.2 dB, 12 GHz, dual-gate GaAs FET chip |
CELERITEK |
| 2 |
CF739 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 3 |
CF750 |
GaAs MMIC (Biased Dual Gate GaAs FET) |
Siemens |
| 4 |
CFA0101 |
19 dBm, 12 GHz, general purpose GaAs FET |
CELERITEK |
| 5 |
CFA0103 |
LOW-NOISE GaAs FETS |
CELERITEK |
| 6 |
CFB0101 |
GENERAL PURPOSE GAAS FETS |
CELERITEK |
| 7 |
CFB0103 |
0.7 dB, 12 GHz, low-noise GaAs FET |
CELERITEK |
| 8 |
CFB0301 |
0.6 dB, high dynamic range low-noise GaAs FET |
CELERITEK |
| 9 |
CFB0303 |
High Dynamic Range Low-Noise GaAs FET |
CELERITEK |
| 10 |
CFC0301 |
22.5 dBm, medium power GaAs FET |
CELERITEK |
| 11 |
CFH2162-P1 |
800 to 900 MHz, +36 dBm, power GaAs FET |
CELERITEK |
| 12 |
CFH2162-P3 |
1.8 to 2 GHz, +36 dBm, power GaAs FET |
CELERITEK |
| 13 |
CFH2162-P5 |
2.3 TO 2.5 GHZ +36 DBM POWER GAAS FET |
CELERITEK |
| 14 |
CFK0301 |
High Dynamic Range Dual, Low-Noise GaAs FET |
etc |
| 15 |
CFK0301-AK-0000 |
900 MHz, high dynamic range dual, low-noise GaAs FET |
CELERITEK |
| 16 |
CFK0301-AK-000T |
900 MHz, high dynamic range dual, low-noise GaAs FET |
CELERITEK |
| 17 |
CFK2062-P1 |
800 to 900 MHz, +30 dBm, power GaAs FET |
CELERITEK |
| 18 |
CFK2062-P1-000T |
800 to 900 MHz, +30 dBm, power GaAs FET |
CELERITEK |
| 19 |
CFK2162-P1 |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 20 |
CFK2162-P1-000T |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 21 |
CFK2162-P5 |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 22 |
CFK2162-P5-000T |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 23 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 24 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 25 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 26 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 27 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 28 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 29 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 30 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| | | |
