No. |
Part Name |
Description |
Manufacturer |
1 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
2 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
3 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
4 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
5 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
6 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
7 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
8 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
9 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
10 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
11 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
12 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
13 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
14 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
15 |
2N2152 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
16 |
2N2153 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
17 |
2N2154 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
18 |
2N2156 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
19 |
2N2157 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
20 |
2N2158 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
21 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
22 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
23 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
24 |
2N3962 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
25 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
26 |
2N3963 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
27 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
28 |
2N3964 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
29 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
30 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
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