| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150PFT200 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 2 |
150PFT250 |
V(rrm/drm): 2500V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 3 |
160PFT100 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 4 |
160PFT100A |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 5 |
160PFT120 |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 6 |
160PFT120A |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 7 |
160PFT140 |
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 8 |
160PFT160 |
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 9 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
| 10 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 11 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
| 12 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
| 13 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
| 14 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 15 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 16 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 17 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 18 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 19 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 20 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 21 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 22 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 23 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 24 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 25 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 26 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 27 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
| 28 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 29 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 30 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| | | |
