| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GC4510 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 2 |
GC4511 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 3 |
GC4512 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 4 |
GC4513 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 5 |
GC4530 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 6 |
GC4531 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 7 |
GC4532 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 8 |
GC4533 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 9 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 10 |
K4D263238E-GC45 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 11 |
TGC4510-SM |
17.7 - 26.5 GHz K Band Upconverter |
Qorvo |
| 12 |
TGC4546-SM |
36 - 45 GHz Ka Band Upconverter with Quadrupler |
Qorvo |
| | | |
