No. |
Part Name |
Description |
Manufacturer |
1 |
1.5SMC150 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
2 |
1.5SMC150A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
3 |
1M150ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance. |
Motorola |
4 |
1M150ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance. |
Motorola |
5 |
1M150ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance. |
Motorola |
6 |
1N5276AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 150 V. Tolerance +-10%. |
Microsemi |
7 |
1N5276B |
500 milliwatts glass silicon zener diode, zener voltage 150V |
Motorola |
8 |
1N5276BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 150 V. Tolerance +-5%. |
Microsemi |
9 |
1N5276UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 150 V. |
Microsemi |
10 |
1N5953 |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
11 |
1N5953A |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
12 |
1N5953C |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
13 |
1N5953D |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
14 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
15 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
16 |
1SMB150 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 600W peak power, 3.0W steady state. |
Motorola |
17 |
1SMB150A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 600W peak power, 3.0W steady state. |
Motorola |
18 |
1SMB5953A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 150 V. +-10% tolerance. |
Motorola |
19 |
1SMB5953B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 150 V. +-5% tolerance. |
Motorola |
20 |
1SMC150 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
21 |
1SMC150A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
22 |
1V095 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
23 |
1Z150 |
Silicon diffused type zener diode. Typ zener voltage 150 V. |
Panasonic |
24 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
25 |
2SD1425 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
26 |
2SD1426 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
27 |
2SD1427 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
28 |
2SD1431 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
29 |
2V095 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
30 |
3EZ150D |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
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