| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 2 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
| 3 |
1N4005 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
Jinan Gude Electronic Device |
| 4 |
1N4005 |
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 5 |
1N4005GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 6 |
1N4128C |
500mW low noise silicon zener diode. Nominal zener voltage 60V. 2% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N4128D |
500mW low noise silicon zener diode. Nominal zener voltage 60V. 1% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N4247 |
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 9 |
1N4247GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 10 |
1N4385GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 11 |
1N462A |
General purpose high conductance diode. Working inverse voltage 60V. |
Fairchild Semiconductor |
| 12 |
1N4946GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 13 |
1N5264AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. |
Microsemi |
| 14 |
1N5264B |
500 milliwatts glass silicon zener diode, zener voltage 60V |
Motorola |
| 15 |
1N5264BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. |
Microsemi |
| 16 |
1N5264UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. |
Microsemi |
| 17 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 18 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 19 |
1N5618GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 20 |
1N5619GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 600V |
Vishay |
| 21 |
1N5626GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 600V |
Vishay |
| 22 |
1N6482 |
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 600V |
Vishay |
| 23 |
1PM6 |
1.2A Single Phase Rectifier Bridge 600V |
IPRS Baneasa |
| 24 |
20PM6AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 25 |
2722 162 05321 |
VHF/UHF Broadband Circulators/Isolators, frequency range 600 to 960 MHz |
Philips |
| 26 |
2722 162 06111 |
VHF/UHF Broadband Circulators/Isolators, frequency range 600 to 960 MHz |
Philips |
| 27 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 28 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 29 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 30 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
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