No. |
Part Name |
Description |
Manufacturer |
1 |
10 SIP |
10SIP Package Dimensions |
Samsung Electronic |
2 |
10 SIP H/S |
10SIP H/S Package Dimensions |
Samsung Electronic |
3 |
12 DIP H/S |
Package Dimensions |
Samsung Electronic |
4 |
12 DIP/F |
12DIP/F Package Dimensions |
Samsung Electronic |
5 |
12 SIP |
12SIP Package Dimensions |
Samsung Electronic |
6 |
12 SIP H/S |
12SIP H/S Package Dimensions |
Samsung Electronic |
7 |
12 ZSIP-H/S |
Package Dimensions |
Samsung Electronic |
8 |
14 DIP |
Package Dimensions |
Samsung Electronic |
9 |
14 DIP H/S |
Package Dimensions |
Samsung Electronic |
10 |
14 SOP |
14SOP Package Dimensions |
Samsung Electronic |
11 |
16 DIP |
Package Dimensions |
Samsung Electronic |
12 |
16 DIP H/S |
Package Dimensions |
Samsung Electronic |
13 |
16 SOP |
16SOP Package Dimensions |
Samsung Electronic |
14 |
16 ZIP |
Package dimensions |
Samsung Electronic |
15 |
16 ZIP |
16ZIP Package Dimensions |
Samsung Electronic |
16 |
17 ZSIP-H/S |
Package Dimensions |
Samsung Electronic |
17 |
171J |
High Voltage Differential FET Amplifier |
Intronics |
18 |
18 DIP |
Package Dimensions |
Samsung Electronic |
19 |
18 ZIP |
18ZIP Package Dimensions |
Samsung Electronic |
20 |
19 ZIP |
Package dimensions |
Samsung Electronic |
21 |
19 ZIP |
19ZIP Package Dimensions |
Samsung Electronic |
22 |
1BQ20 |
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
23 |
1BQ40 |
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
24 |
1N3595 |
Low Leakage Diode |
Microsemi |
25 |
1N456 |
25 V, 500 mW low leakage diode |
BKC International Electronics |
26 |
1N456 |
Low leakage diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
27 |
1N456 |
High Conductance Low Leakage Diode |
National Semiconductor |
28 |
1N456/A |
LOW LEAKAGE DIODES |
BKC International Electronics |
29 |
1N456A |
25 V, 500 mW low leakage diode |
BKC International Electronics |
30 |
1N456A |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| | | |