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Datasheets for GE DI

Datasheets found :: 2030
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 10 SIP 10SIP Package Dimensions Samsung Electronic
2 10 SIP H/S 10SIP H/S Package Dimensions Samsung Electronic
3 12 DIP H/S Package Dimensions Samsung Electronic
4 12 DIP/F 12DIP/F Package Dimensions Samsung Electronic
5 12 SIP 12SIP Package Dimensions Samsung Electronic
6 12 SIP H/S 12SIP H/S Package Dimensions Samsung Electronic
7 12 ZSIP-H/S Package Dimensions Samsung Electronic
8 14 DIP Package Dimensions Samsung Electronic
9 14 DIP H/S Package Dimensions Samsung Electronic
10 14 SOP 14SOP Package Dimensions Samsung Electronic
11 16 DIP Package Dimensions Samsung Electronic
12 16 DIP H/S Package Dimensions Samsung Electronic
13 16 SOP 16SOP Package Dimensions Samsung Electronic
14 16 ZIP Package dimensions Samsung Electronic
15 16 ZIP 16ZIP Package Dimensions Samsung Electronic
16 17 ZSIP-H/S Package Dimensions Samsung Electronic
17 171J High Voltage Differential FET Amplifier Intronics
18 18 DIP Package Dimensions Samsung Electronic
19 18 ZIP 18ZIP Package Dimensions Samsung Electronic
20 19 ZIP Package dimensions Samsung Electronic
21 19 ZIP 19ZIP Package Dimensions Samsung Electronic
22 1BQ20 20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package International Rectifier
23 1BQ40 40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package International Rectifier
24 1N3595 Low Leakage Diode Microsemi
25 1N456 25 V, 500 mW low leakage diode BKC International Electronics
26 1N456 Low leakage diode. Working inverse voltage 25V. Fairchild Semiconductor
27 1N456 High Conductance Low Leakage Diode National Semiconductor
28 1N456/A LOW LEAKAGE DIODES BKC International Electronics
29 1N456A 25 V, 500 mW low leakage diode BKC International Electronics
30 1N456A High Conductance Low Leakage Diode Fairchild Semiconductor


Datasheets found :: 2030
Page: | 1 | 2 | 3 | 4 | 5 |



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